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| Zowie Technology Corporation High Voltage Transistor PNP Silicon 3 COLLECTOR 3 BASE 1 2 MMBTA93 1 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -200 -200 -5.0 -500 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o PD R JA Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING MMBTA92=2D ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Max. Unit o OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage(3) ( IC= -1.0mAdc, IB=0 ) Collector-Base Breakdowe Voltage ( IC= -100uAdc, IE=0 ) Emitter - Base Breakdowe Voltage ( IE= -100 uAdc, IC=0 ) Collector Cutoff Current ( VCE= -160 Vdc, IE = 0 ) Emitter Cutoff Curretn ( VEB= -3.0 Vdc, IC=0 ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width 300 uS, Duty Cycle V(BR)CEO -200 - Vdc V(BR)CBO -200 - Vdc V(BR)EBO -5.0 - Vdc ICBO - -0.25 uAdc IEBO - -0.1 uAdc 2.0%. REV. : 0 Zowie Technology Corporation Zowie Technology Corporation o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Characteristic Symbol Min. Max. Unit ON CHARACTERISTICS (3) DC Current Gain ( IC= -1.0 mAdc, VCE= -10 Vdc ) ( IC= -10 mAdc, VCE= -10 Vdc ) ( IC= -30 mAdc, VCE= -10 Vdc ) HFE 25 40 25 - - Collector-Emitter Saturation Voltage ( IC= -20 mAdc, IB= -2.0 mAdc ) VCE(sat) - -0.5 Vdc Base-Emitter Saturation Voltage ( IC= -20 mAdc, IB= -2.0 mAdc ) VBE(sat) - -0.9 Vdc SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC= -10 mAdc, VCE= -20 Vdc, f=100 MHZ ) Collector-Base Capacitance ( VCB= -20 Vdc, IE=0, f=1.0 MHZ ) (3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%. fT 50 - MHZ Ccb - 8.0 pF REV. : 0 Zowie Technology Corporation Zowie Technology Corporation MMBTA93 300 TJ = +125 C o VCE = 10 Vdc 250 hFE, DC CURRETN GAIN 200 TJ = 25 C o 150 TJ = -55 C o 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT ( mA ) Figure 1. DC Current Gain 100 150 tT, CURRENT-GAIN-BANDWIDTH (MHz) CIb @ 1MHz 130 110 90 70 50 30 10 1 3 5 7 9 11 13 15 17 VCE=20 V f=20MHz o TJ= 25 C C, CAPACITANCE ( pF ) 10 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 1000 19 21 VR, REVERSE VOLTAGE ( VOLTS ) IC, COLLECTOR CURRENT ( mA ) Figure 2. Capacitance Figure 3. Current-Gain-Bandwidth 1.4 1.2 VCE(sat) @ 25 C, IC/IB = 10 VCE(sat) @ 125 C, IC/IB = 10 o o V, VOLTAGE ( VOLTS ) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 VCE(sat) @ -55 C, IC/IB = 10 VBE(sat) @ 25 C, IC/IB = 10 VBE(sat) @ 125 C, IC/IB = 10 VBE(sat) @ -55 C, IC/IB = 10 VBE(on) @ 25 C, VCE = 10 V VBE(on) @ 125 C, VCE = 10 V VBE(on) @ -55 C, VCE = 10 V o o o o o o o 1.0 10 100 IC, COLLECTOR CURRENT ( mA ) Figure 4. "On" Voltages REV. : 0 Zowie Technology Corporation |
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